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HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
June 1997
35A, 1200V, UFS Series N-Channel IGBTs
Description
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Features
* 35A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss
Ordering Information
PART NUMBER HGTG15N120C3 HGTP15N120C3 HGT1S15N120C3 HGT1S15N120C3S PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND 15N120C3 15N120C3 15N120C3 15N120C3
Symbol
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in tape and reel; i.e., HGT1S15N120C3S9A.
G
Formerly Developmental Type TA49145.
E
Packaging
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
JEDEC TO-220AB (ALTERNATE VERSION)
EMITTER COLLECTOR GATE
COLLECTOR (FLANGE)
COLLECTOR (FLANGE)
JEDEC TO-262AA
EMITTER COLLECTOR GATE
JEDEC TO-263AB
M
A
A
COLLECTOR (FLANGE) GATE EMITTER
COLLECTOR (FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
A
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
4244.3
1
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3S, HGT1S15N120C3S Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . tSC 35 15 120 20 30 15A at 1200V 164 1.32 100 -55 to 150 260 6 25 W W/oC mJ
oC oC
UNITS V A A A V V
1200
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 720V, TJ = 125oC, RGE = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 10 VGE = 15V, L = 1mH VCE(PK) = 960V VCE(PK) = 1200V VGE = 15V VGE = 20V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 4.0 40 15 TYP 25 2.3 2.4 5.6 8.8 75 100 17 25 470 350 2100 4700 MAX 250 3.0 3.5 3.2 7.5 100 100 130 550 400 0.76 UNITS V V A mA V V V nA A A V nC nC ns ns ns ns J J
oC/W
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP Qg(ON) td(ON)I trI td(OFF)I t fI EON EOFF RJC
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVES TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 10 L = 1mH
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery.
2
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 100 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 80 TC = -55oC 80 DUTY CYCLE <0.5%, TC = 25oC PULSE DURATION = 250s VGE = 15V 12V 10V 9V 8.5V 8V
60
60
40
TC = 150oC TC = 25oC
40
20
20
0 6 8 10 12 14 VGE , GATE TO EMITTER VOLTAGE (V)
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 20 TC = 25oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
100 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V 80 TC = 25oC TC = 150oC
15 TC = 150oC
60
10
40
5
20
0 0 2 4 8 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10
0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
ICE , DC COLLECTOR CURRENT (A)
VGE = 15V 30 25 20 15 10 5 0 25
VCE = 720V, RGE = 25, TJ = 125oC
30 ISC 25
125
100
20
75
15
tSC
50
50
75
100
125
150
10
10
TC , CASE TEMPERATURE (oC)
13 11 12 14 VGE , GATE TO EMITTER VOLTAGE (V)
15
25
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
ISC, PEAK SHORT CIRCUIT CURRENT(A)
35
35
150
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S Typical Performance Curves
100 td(ON)I , TURN-ON DELAY TIME (ns)
(Continued)
600 td(OFF)I , TURN-OFF DELAY TIME (ns) 500 400 VGE = 10V or 15V 300
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V
50 VGE = 10V 30
200
20 VGE = 15V
10 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A)
100
5
10
15
20
25
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT
300
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V VGE = 10V
500 400
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V VGE = 10V
trI , TURN-ON RISE TIME (ns)
100 tfI , FALL TIME (ns) 300
VGE = 15V
VGE = 15V
10
200
1
100 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 25
5
10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT
10 EON , TURN-ON ENERGY LOSS (mJ)
EOFF , TURN-OFF ENERGY LOSS (mJ)
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V
16 14 12 10 8 6 4 2 0 5
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V
8 VGE = 10V 6
VGE = 10V VGE = 15V
4
2
VGE = 15V
0
5
10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A)
25
10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT
4
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S Typical Performance Curves
100 fMAX , OPERATING FREQUENCY (kHz)
(Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 50
TJ = 150oC, TC = 75oC, RG = 10 L = 1mH, VCE(PK) = 960V
TJ = 150oC, VGE = 15V, RG = 10
40
30 20 VGE = 10V 10 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.76oC/W 1 5 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 15V
30
20
10
0 0 200 400 600 800 1000 1200 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
4000 FREQUENCY = 1MHz 3500 CIES C, CAPACITANCE (pF) 3000 2500 2000 1500 1000 500 0 0 CRES COES 25
VGE, GATE TO AEMITTER VOLTAGE (V)
14 12
IG(REF) = 4.21mA, RL = 80, TC = 25oC VCE = 1200V
10 8 VCE = 400V 6 4 2 0 VCE = 800V
5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
40
80 Qg , GATE CHARGE (nC)
120
160
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
ZJC , NORMALIZED THERMAL IMPEDANCE
100
10-1
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 t1 PD
10-2 SINGLE PULSE
t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101
10-3 10-5
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S Test Circuit and Waveforms
L = 1mH RHRP15120 VGE
90% 10% EON EOFF
RG = 10 + VDD = 960V
VCE 90% ICE 10% td(OFF)I tfI trI td(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBT's
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26TM" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/ (EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC) / RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
6
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
E A OS Q OR D TERM. 4 OP
INCHES SYMBOL A b b1 b2 c D MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625
MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 -
L1 L
b1 b2 c b
1 2 3 J1 3 2 1
E e e1 J1 L L1 OP Q
0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270
5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85
e e1
BACK VIEW
LEAD NO. 1 LEAD NO. 2 LEAD NO. 3 TERM. 4 MOUNTING FLANGE
- GATE - COLLECTOR - EMITTER - COLLECTOR
OR OS
NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.
7
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-220AB (Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
OP E Q H1 D TERM. 4 A A1
INCHES SYMBOL A A1 b b1 c D MIN 0.170 0.048 0.030 0.045 0.018 0.590 0.395 MAX 0.180 0.052 0.034 0.055 0.022 0.610 0.405
MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.46 14.99 10.04 MAX 4.57 1.32 0.86 1.39 0.55 15.49 10.28 NOTES 2, 4 2, 4 2, 4 2, 4 5 5 6 3 -
L1
b1 c b
E e e1
L 60o 1 2 3
0.100 TYP 0.200 BSC 0.235 0.095 0.530 0.110 0.149 0.105 0.255 0.105 0.550 0.130 0.153 0.115
2.54 TYP 5.08 BSC 5.97 2.42 13.47 2.80 3.79 2.66 6.47 2.66 13.97 3.30 3.88 2.92
H1 e e1
J1
J1 L L1 OP
LEAD NO. 1 LEAD NO. 2 LEAD NO. 3 TERM. 4
- GATE - COLLECTOR - EMITTER - COLLECTOR
Q
NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Dimension (without solder). 3. Solder finish uncontrolled in this area. 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 10-95.
8
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S TO-262AA
3 LEAD JEDEC TO-262AA PLASTIC PACKAGE
E 15o A A1 H1 TERM. 4 D
INCHES SYMBOL A A1 b b1 c D MIN 0.170 0.048 0.030 0.045 0.018 0.405 0.395 MAX 0.180 0.052 0.034 0.055 0.022 0.425 0.405
MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.46 10.29 10.04 MAX 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES 3, 4 3, 4 3, 4 3, 4 5 5 6 2
L1
b1 c b
E e e1 H1 J1
0.100 TYP 0.200 BSC 0.045 0.095 0.530 0.110 0.055 0.105 0.550 0.130
2.54 TYP 5.08 BSC 1.15 2.42 13.47 2.80 1.39 2.66 13.97 3.30
L
60o 1 2 3 J1
L L1 e e1
LEAD NO. 1 LEAD NO. 2 LEAD NO. 3 TERM. 4 - GATE - COLLECTOR - EMITTER - COLLECTOR
NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC TO-262AA outline dated 6-90. 2. Solder finish uncontrolled in this area. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 4 dated 10-95.
9
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E H1 TERM. 4 D A A1
INCHES SYMBOL A A1 b b1 MIN 0.170 0.048 0.030 0.045 0.310 0.018 0.405 0.395 MAX 0.180 0.052 0.034 0.055 0.022 0.425 0.405
MILLIMETERS MIN 4.32 1.22 0.77 1.15 7.88 0.46 10.29 10.04 MAX 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES 4, 5 4, 5 4, 5 2 4, 5 7 7 4, 6 3 2
L2 L1 1 3
b2 c D
L
b e e1
b1 c
J1 .450 (11.43)
E e e1 H1 J1 L L1
.350 (8.89)
0.100 TYP 0.200 BSC 0.045 0.095 0.175 0.090 0.050 0.315 0.055 0.105 0.195 0.110 0.070 -
2.54 TYP 5.08 BSC 1.15 2.42 4.45 2.29 1.27 8.01 1.39 2.66 4.95 2.79 1.77 -
TERM. 4
L3
L2 L3
b2
.700 (17.78)
3
1 .150 (3.81) .080(2.03) .062(1.58) .062(1.58) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS LEAD NO. 1 LEAD NO. 3 TERM. 4 - GATE - EMITTER - COLLECTOR .080(2.03)
NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 7 dated 10-95.
10
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S TO-263AB
24mm TAPE AND REEL
40mm MIN. ACCESS HOLE 1.5mm DIA. HOLE 30.4mm
4.0mm 2.0mm 1.75mm C L
13mm 330mm 100mm
24mm
16mm 24.4mm
USER DIRECTION OF FEED
COVER TAPE GENERAL INFORMATION 1. USE "9A" SUFFIX ON PART NUMBER. 2. 800 PIECES PER REEL. 3. ORDER IN MULTIPLES OF FULL REELS ONLY. 4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
Revision 7 dated 10-95
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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